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| SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. H KF17N50N N CHANNEL MOS FIELD EFFECT TRANSISTOR A N O Q B K FEATURES VDSS(Min.)= 500V, ID= 17A Drain-Source ON Resistance : RDS(ON)=0.35(Max.) Qg(typ.) =41nC @VGS =10V d D E M P P T 1 2 3 MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25E Pulsed Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Drain Power Dissipation Tc=25E ) SYMBOL VDSS VGSS 3/4 ID (Note1) (Note 2) (Note 1) (Note 3) IDP EAS EAR dv/dt PD Tj Tstg RATING 500 30 17 A 45 870 22.5 4.5 223 1.79 150 E E -55150 mJ mJ V/ns W W/E UNIT V V 1. Gate 2. Drain 3. Source DIM MILLIMETERS _ A 15.60 + 0.20 _ B 4.80 + 0.20 _ C 19.90 + 0.20 _ D 2.00 + 0.20 _ d 1.00 + 0.20 _ E 3.00 + 0.20 _ 3.80 + 0.20 F _ G 3.50 + 0.20 _ H 13.90 + 0.20 _ I 12.76 + 0.20 _ J 23.40 + 0.20 K 1.5+0.15-0.05 _ L 16.50 + 0.30 _ M 1.40 + 0.20 _ 13.60 + 0.20 N _ 9.60 + 0.20 O _ P 5.45 + 0.30 _ Q 3.20 + 0.10 _ R 18.70 + 0.20 0.60+0.15-0.05 T F C J I G TO-3P(N)-E Derate above25E Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RthJC RthJA 0.54 E E 40 /W /W Marking D 1 KF17N50 N 801 2 G S 1 2 PRODUCT NAME LOT NO 2008. 10. 2 Revision No : 1 L R 1/6 KF17N50N ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS BVDSS/ Tj IDSS Vth IGSS RDS(ON) ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=500V, VGS=0V, VDS=VGS, ID=250 A VGS= 30V, VDS=0V VGS=10V, ID=8.5A 500 2.0 0.5 0.3 10 4.0 100 0.35 V V/ A V nA Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISP VSD trr Qrr VGS Note 5) Essentially independent of operating temperature. 2008. 10. 2 Revision No : 1 2/6 KF17N50N Fig1. ID - VDS 100 VGS=10V Fig2. ID - VGS 10 2 VDS=20V Drain Current ID (A) VGS=6V Drain Current ID (A) 10 VGS=5V 10 1 100 C 25 C 1 10 0 0.1 0.1 1 10 100 10 -1 3 4 5 6 7 8 9 10 Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V) Fig3. BVDSS - Tj Normalized Breakdown Voltage BVDSS 1.2 VGS = 0V IDS = 250 Fig4. RDS(ON) - ID 0.7 1.1 On - Resistance RDS(ON) () 0.5 VGS=6V VGS=10V 1.0 0.3 0.9 0.8 -100 -50 0 50 100 150 0.1 0 5 10 15 20 25 30 Junction Temperature Tj ( C ) Drain Current ID (A) Fig5. IS - VSD 10 2 Fig6. RDS(ON) - Tj 3.0 VGS =10V IDS = 8.5A Reverse Drain Current IS (A) Normalized On Resistance 2.5 2.0 1.5 1.0 0.5 10 1 100 C 25 C 10 0 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.0 -100 -50 0 50 100 150 Source - Drain Voltage VSD (V) Junction Temperature Tj ( C) 2008. 10. 2 Revision No : 1 3/6 KF17N50N Fig 7. C - VDS 104 12 ID=17A Fig8. Qg- VGS Gate - Source Voltage VGS (V) 10 8 6 4 2 0 0 5 10 15 20 VDS = 100V VDS = 400V VDS = 250V Capacitance (pF) Ciss 103 Coss 102 Crss 101 0 10 20 30 40 25 30 35 40 Drain - Source Voltage VDS (V) Gate - Charge Qg (nC) Fig9. Safe Operation Area 102 100s 1ms Fig10. ID - Tj 18 16 Drain Current ID (A) 101 Drain Current ID (A) 14 12 10 8 6 4 2 100 Operation in this area is limited by RDS(ON) 100ms 10ms DC 10-1 Tc= 25 C Tj = 150 C Single pulse 10 100 2 101 102 103 0 25 50 75 100 125 150 Drain - Source Voltage VDS (V) Junction Temperature Tj ( C) Fig11. Transient Thermal Response Curve 100 Transient Thermal Resistance Duty=0.5 10-1 0.2 0.1 0.05 PDM t1 t2 Single Pulse 0.02 10-2 0.01 - Rth(j-c) = 0.54 C/W Max. - Duty Factor, D= t1/t2 10-3 10-2 10-1 100 101 10-5 10-4 TIME (sec) 2008. 10. 2 Revision No : 1 4/6 KF17N50N Fig12. Gate Charge VGS Fast Recovery Diode 10 V ID 0.8 VDSS 1.0 mA ID Q Qgs Qgd Qg VGS VDS Fig13. Single Pulsed Avalanche Energy 1 EAS= LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 50V 25 VDS 10 V VGS ID(t) VDD VDS(t) Time tp Fig14. Resistive Load Switching VDS 90% RL 0.5 VDSS 25 VDS 10V VGS VGS 10% td(on) ton tr td(off) tf toff 2008. 10. 2 Revision No : 1 5/6 KF17N50N Fig15. Source - Drain Diode Reverse Recovery and dv /dt DUT VDS IF Body Diode Forword Current ISD (DUT) IRM di/dt IS Body Diode Reverse Current 0.8 VDSS driver VDS (DUT) Body Diode Recovery dv/dt VSD VDD 10V VGS Body Diode Forword Voltage drop 2008. 10. 2 Revision No : 1 6/6 |
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